Prof. Leonid Culiuc (Kulyuk) (b. 1950) graduated with honors in 1972 from the Polytechnic Institute of Chisinau, Faculty of Electrophysics. He got his Ph.D. in 1976 on investigation of four-wave parametric processes in stimulated Raman scattering at the Physical Department of the Moscow State University. Thereafter, he continued his work at the Institute of Applied Physics of the Academy of Sciences of Moldova in the field of condensed matter physics. In 1989 he successfully defended his dissertation for the degree of Doctor of Physical and Mathematical Sciences (Dr. Sci.) on radiative and nonlinear optical processes in multinary semiconductors, and in 1993 he was awarded the title of professor. From 1997 to 2001 and from 2005 to 2016 he was Director of the Institute of Applied Physics. At present, he is the Head of the Laboratory of Physics of Semiconductor Compounds "Sergiu Radauțan” of the Institute. In 2012 he was elected Full Member of the Academy of Sciences of Moldova. His current research interests include nonlinear optical characterization of surfaces and interfaces, experimental and theoretical investigation of radiative processes in solids and quantum confined systems, including excitonic luminescence of 2D transition metal dichalcogenides layered semiconductors, optical, and photoelectrical properties of semiconductors. Professor Leonid Culiuc (Kulyuk) (h-index =20) has authored or co-authored over 110 articles published in peer reviewed reference journals and obtained 11 patents. Under his leadership, 11 doctoral theses in the field of semiconductor physics and materials science were defended.
He was invited professor at several Universities: the University of Ottawa (Canada), Konstanz University (Germany), University Lyon1 (France), Saitama University (Japan), Russian Technological University “RTU MIREA”, Moscow, and West University of Timisoara (Romania).
Prof. Culiuc (Kulyk) is the Laureate of the State Prize of the Republic of Moldova in the Field of Science and Technology for the work on Ternary and Multinary compounds (1998). In 2001, he was awarded the medal of the French Republic “Chevalier dans l’Ordre des Palmes Academiques”.

He graduated with honors from Warsaw University of Technology, Faculty of Electronics and Information Technology in 2000. In 2005 he was awarded a PhD in technical sciences in microelectronics at the same University. He was assistant professor at the Institute of Microelectronics and Optoelectronics (IMiO) in Warsaw University of Technology since 2005. He is a supervisor or reviewer of numerous engineering and master theses. He was a lecturer in the field of microelectronics focused on ASIC design at the Warsaw University of Technology for over 20 years. He joined the Lukasiewicz – Institute of Microelectronics and Photonics (Lukasiewicz-IMiF) as an assistant professor in the Department of Integrated Circuits and Systems Design in 2006. He took the position of Head of the Department of Integrated Circuits and Systems Design in 2012. Since 2024 he is the Director of Silicon Microelectronics Center in Lukasiewicz Institute of Microelectronics and Photonics covering the activities in area of silicon technology, silicon sensors development, micro assembly, characterization and ASIC and systems design in Lukasiewicz-IMiF. For over 25 years he is involved in the field of microelectronics, microelectronic applications and founded projects development funded in domestic and international framework programs.

Dr .He Jin received the B.S, M.S and Ph. D degrees, all in microelectronics and solid-state electronics from Tianjin University in 1988 and University of Electronic Science and Technology of China (UESTC) in 1993 and 1999, respectively. He had worked in Institute of Microelectronics of Peking University as a post-doctoral from Sept,1999 to Aug., 2001 and as an associated professor from Aug.,2001 to Dec., 2001. He has been a visiting scholar and then research scientist in the Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, CA, USA from Dec., 2001 to Aug., 2005(J-1 and H1-B). He has been a full professor of Peking University since Aug., 2005 to now.

Dr. He’s research interests lie in the general area of MOSFET compact modeling, characterization of MOSFETs and parameter extraction, MOSFET’s reliability issues, power device and smart power IC, new structure development of the deep nanoscale MOSFET. As the author and co-author, he has published the peer reviewed academic paper more than 300 in the international journals such as the IEEE. Electron Device Letters(EDL)，IEEE. Transactions on Electron Devices(T-ED)，Semiconductor Science and Technology，Solid State Electronics, International Journal of Electronics, and six chapter books.

Dr. Anis Rahman is a leading expert in the field of Terahertz photonics and nanotechnology, specifically known for pioneering the Dendrimer Dipole Excitation (DDE) method. This breakthrough technology enables the generation of Continuous-Wave (CW) T-rays across a broad spectrum (0.1 THz to 30 THz) without the need for the expensive femtosecond pulsed lasers required by traditional Auston Switches. Dr. Rahman’s work focuses on the intersection of semiconductors and nanomaterials, providing high-resolution, non-destructive imaging and spectroscopy solutions for material science. Unified T-ray has proven its inevitability superseding the SEM, TEM, AFM, and SIMS Paradigm. Dr. Rahman has authored numerous publications and holds several patents in the field of Terahertz generation and semiconductor characterization. As the founder of Applied Research & Photonics, his mission is to transition advanced T-ray applications from the laboratory to industrial scale, offering innovative tools for the next generation of optoelectronics and nanostructure inspection.

Yongkui Zhang is a Senior Engineer at the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS). He received his master’s degree from the University of Science and Technology Beijing. He began his career in 2004 at Semiconductor Manufacturing International Corporation (SMIC), where he contributed to thin film processes, logic process integration, and flash memory development. In 2012, he joined IMECAS, shifting his focus to advanced CMOS devices and integrated circuit process technology. His current research centers on vertical channel devices and wafer-level 3D integration, encompassing key process technologies, device structures, channel materials, reliability mechanisms, and CMOS integration. He has authored over 60 peer-reviewed papers and holds more than 60 patents.

Monssef DRISSI-HABTI is Research Professor at The French Institute for Transports. He a PhD thesis (1994) and the title of Research Professor since 1999 both on thermo-mechanical behavior of ceramic composite materials for aerospace. He worked in Japan from 1995 to 1999 as visiting researcher in NIRI Nagoya and Visiting Professor at the University of Tokyo. He then worked until 2003 at Brown University of Engineering, RI, USA. His experience includes ceramic matrix composites for thermal protection of space crafts on both space programs HERMES (European Space Program) and NIPPON HOPE (Japan Space Program). His experience includes thermo-mechanical behavior of smart composite materials. In USA, he worked on super-alloys for nuclear applications, in collaboration with the Research Centre Norton - St Gobain. His current research is mainly focusing on the development of structures based on smart composite materials and smart hi-voltage power cables for offshore wind-energy generation (Projects with General Electric), transports (SNCF-TGV), smart cities and safety-security of critical infrastructures. He is PI of many national and international projects. He is also author of more than 100articles in scientific journals.